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In our paper, we discovered that the contact between bismuth (Bi), a semimetal, and monolayer MoS2 has an ultra-low resistance close to the quantum limit, on par with the performance of the traditional semiconductors like Si, GaN, and InGaAs. Technically, we take advantage of the bond saturation of Bi surface and the zero density of state of Bi as a semimetal, and reach what we call «Gap State Saturation». The Schottky Barrier no longer exists between Bi and MoS2, so the whole monolayer device can reach a much better performance, which even surpasses Si if benchmarked by ON current per cross sectional area.
Note: Many news coverages and videos claim this work to be «a breakthrough of 1-nm node technology». While we agree it solves one of the biggest problems for creating monolayer transistors (which is indeed promising to be applied in 1-nm node technology), we didn't make an ultra-short channel device which meets the standard of 1-nm node in this work.
Дальше на ангстремы перейдут?
С дисульфида молибдена транзисторы можно стереть пальцем
Тайваньская TSMC заявляет о прорыве в области 1-нм чипов